The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jul. 30, 2012
Sang-jine Park, Yongin-si, KR;
Kee-sang Kwon, Seoul, KR;
Doo-sung Yun, Suwon-si, KR;
Bo-un Yoon, Seoul, KR;
Jeong-nam Han, Seoul, KR;
Sang-Jine Park, Yongin-si, KR;
Kee-Sang Kwon, Seoul, KR;
Doo-Sung Yun, Suwon-si, KR;
Bo-Un Yoon, Seoul, KR;
Jeong-Nam Han, Seoul, KR;
Abstract
Provided are methods of fabricating a semiconductor device that include providing a substrate that includes a first region having a gate pattern and a second region having a first trench and an insulating layer that fills the first trench. A portion of a sidewall of the first trench is exposed by etching part of the insulating layer and a first spacer is formed on a sidewall of the gate pattern. A second spacer is formed on the exposed sidewall of the first trench, wherein the first spacer and the second spacer are formed simultaneously.