The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 18, 2014

Filed:

Jan. 19, 2012
Applicants:

Shyue Seng Tan, Singapore, SG;

Tu Pei Chen, Singapore, SG;

Inventors:

Shyue Seng Tan, Singapore, SG;

Tu Pei Chen, Singapore, SG;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/82 (2006.01); H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein is a novel charging controlled RRAM (Resistance Random Access Memory), and various methods of making such a charging controlled RRAM device. In one example, a device disclosed herein includes a first word line structure formed above a substrate, wherein the first word line structure includes a gate electrode and a nano-crystal containing layer of insulating material, a second word line structure formed above the substrate, wherein the second word line structure comprises a gate electrode and a nano-crystal containing layer of insulating material, a first implant region formed in the substrate proximate the first word line structure, wherein the first implant region defines a first bit line, and a second implant region formed in the substrate proximate the second word line structure, wherein the second implant region defines a second bit line.


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