The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 18, 2014
Filed:
Jul. 28, 2005
Applicants:
Hai Tran Quoc, Orsay, FR;
Jerome Villette, Le Plessis Robinson, FR;
Inventors:
Hai Tran Quoc, Orsay, FR;
Jerome Villette, Le Plessis Robinson, FR;
Assignee:
Tel Solar AG, Trubbach, CH;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H05H 1/24 (2006.01); B05D 5/12 (2006.01); C23C 16/00 (2006.01); B05D 3/04 (2006.01); C23C 16/24 (2006.01);
U.S. Cl.
CPC ...
C23C 16/24 (2013.01);
Abstract
A method for manufacturing a poly- or microcrystalline silicon layer on an insulator comprises a silicon containing insulator, growing a thin adhesion promoting layer comprising amorphous silicon onto it and further growing a poly- or microcrystalline silicon layer onto the adhesion promoting layer. Such a sequence of layers, deposited with a PECVD method, shows good adhesion of the poly- or microcrystalline silicon on the base and is advantageous in the production of semiconductors, such as thin film transistors.