The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Jul. 16, 2012
Takao Yonehara, Kawasaki, JP;
Kenji Yamagata, Sagamihara, JP;
Yoshinobu Sekiguchi, Machida, JP;
Kojiro Nishi, Irvine, CA (US);
Takao Yonehara, Kawasaki, JP;
Kenji Yamagata, Sagamihara, JP;
Yoshinobu Sekiguchi, Machida, JP;
Kojiro Nishi, Irvine, CA (US);
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A novel semiconductor article manufacturing method and the like are provided. A method of manufacturing a semiconductor article having a compound semiconductor multilayer film formed on a semiconductor substrate includes: preparing a member including an etching sacrificial layer (), a compound semiconductor multilayer film (), an insulating film (), and a semiconductor substrate () on a compound semiconductor substrate (), and having a first groove () which passes through the semiconductor substrate and the insulating film, and a semiconductor substrate groove () which is a second groove provided in the compound semiconductor multilayer film so as to be connected to the first groove, and bringing an etchant into contact with the etching sacrificial layer through the first groove and then the second groove and etching the etching sacrificial layer to separate the compound semiconductor substrate from the member.