The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Jul. 26, 2012
Naomu Kitano, Machida, JP;
Takashi Minami, Machida, JP;
Nobuo Yamaguchi, Tama, JP;
Takuya Seino, Kawasaki, JP;
Takashi Nakagawa, Hachioji, JP;
Heiji Watanabe, Mino, JP;
Takayoshi Shimura, Ikeda, JP;
Takuji Hosoi, Ibaraki, JP;
Naomu Kitano, Machida, JP;
Takashi Minami, Machida, JP;
Nobuo Yamaguchi, Tama, JP;
Takuya Seino, Kawasaki, JP;
Takashi Nakagawa, Hachioji, JP;
Heiji Watanabe, Mino, JP;
Takayoshi Shimura, Ikeda, JP;
Takuji Hosoi, Ibaraki, JP;
Canon Anelva Corporation, Kawasaki-shi, JP;
Abstract
Provided are a semiconductor device which enables reduction of diffusion of Si in the manufacturing process of an MIPS element and suppression of an increase in EOT, and a method of manufacturing the same. An embodiment of the present invention is a semiconductor device including a field effect transistor having a gate insulating film provided on a silicon substrate and a gate electrode provided on the gate insulating film. The gate electrode is a stack-type electrode including a conductive layer containing at least Ti, N, and O (oxygen) and a silicon layer provided on the conductive layer, and the concentration of oxygen in the conductive layer is highest in the side of the silicon layer.