The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8669170 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 11, 2014

Filed:

Jan. 16, 2012
Applicants:

Ricardo P. Mikalo, Heideblick, DE;

Stefan Flachowsky, Dresden, DE;

Inventors:

Ricardo P. Mikalo, Heideblick, DE;

Stefan Flachowsky, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/425 (2006.01);
U.S. Cl.
CPC ...
Abstract

Disclosed herein are various methods of reducing gate leakage in semiconductor devices such as transistors. In one example, a method disclosed herein includes performing an etching process to define a gate insulation layer of a transistor, wherein the gate insulation layer has an etched edge, performing an angled ion implantation process to implant ions into the gate insulation layer proximate the etched edge of the gate insulation layer and, after performing the angled ion implantation process, performing an anneal process.


Find Patent Forward Citations

Mikalo, Ricardo. (2014). Methods of reducing gate leakage (U.S. Patent No. 8669170). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8669170

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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