The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 11, 2014
Filed:
Aug. 24, 2011
Seung-uk Han, Suwon-si, KR;
Nam-ho Jeon, Hwaseong-si, KR;
Satoru Yamada, Seoul, KR;
Young-jin Choi, Hwaseong-si, KR;
Seung-Uk Han, Suwon-si, KR;
Nam-Ho Jeon, Hwaseong-si, KR;
Satoru Yamada, Seoul, KR;
Young-Jin Choi, Hwaseong-si, KR;
Abstract
A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate; forming a gate electrode on the gate dielectric layer; forming an etch stop layer on the gate electrode; forming a capacitor on the semiconductor substrate adjacent to the gate electrode; after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode; and, diffusing deuterium into the gate dielectric layer through the contact hole.