The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 11, 2014

Filed:

Apr. 04, 2013
Applicants:

Kesvakumar V. C. Muniandy, Klang, MY;

Navas Khan Oratti Kalandar, Subang Jaya, MY;

Lan Chu Tan, Singapore, SG;

Inventors:

Kesvakumar V. C. Muniandy, Klang, MY;

Navas Khan Oratti Kalandar, Subang Jaya, MY;

Lan Chu Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/50 (2006.01); H01L 21/48 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of making a semiconductor device includes providing a first semiconductor die and a conductive frame member having at least one conductive via. A first encapsulation layer is formed. A first redistribution layer is formed opposite the first encapsulation layer. A second redistribution layer is formed opposite the first redistribution layer. A second semiconductor die is mounted and electrically connected with receptor pads in the second redistribution layer. A third semiconductor die is mounted to the second semiconductor die and electrically connected with bond wires to a conductor in the second redistribution layer. A second encapsulation layer embeds the second and third semiconductor dies, the wires, and the conductor in the second redistribution layer.


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