The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
May. 29, 2012
Applicants:
Kai-ling Chiu, Pingtung County, TW;
Chao-sheng Cheng, Taichung, TW;
Chih-yu Tseng, Hsinchu County, TW;
Yu-jen Liu, Kaohsiung, TW;
Inventors:
Kai-Ling Chiu, Pingtung County, TW;
Chao-Sheng Cheng, Taichung, TW;
Chih-Yu Tseng, Hsinchu County, TW;
Yu-Jen Liu, Kaohsiung, TW;
Assignee:
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
Abstract
A MOS capacitor includes a substrate, a p-type MOS (pMOS) transistor positioned on the substrate, and an n-type MOS (nMOS) transistor positioned on the substrate. More important, the pMOS transistor and the nMOS transistor are electrically connected in parallel. The MOS transistor further includes a deep n-well that encompassing the pMOS transistor and the nMOS transistor.