The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Sep. 11, 2011
Jason Patrick Henning, Carrboro, NC (US);
Qingchun Zhang, Cary, NC (US);
Sei-hyung Ryu, Cary, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Williams Palmour, Cary, NC (US);
Scott Allen, Apex, NC (US);
Jason Patrick Henning, Carrboro, NC (US);
Qingchun Zhang, Cary, NC (US);
Sei-Hyung Ryu, Cary, NC (US);
Anant Agarwal, Chapel Hill, NC (US);
John Williams Palmour, Cary, NC (US);
Scott Allen, Apex, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the substrate. A junction barrier array is provided in the drift layer just below the Schottky layer. The elements of the junction barrier array are generally doped regions in the drift layer. To increase the depth of these doped regions, individual recesses may be formed in the surface of the drift layer where the elements of the junction barrier array are to be formed. Once the recesses are formed in the drift layer, areas about and at the bottom of the recesses are doped to form the respective elements of the junction barrier array.