The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8664596 B1

PDF
Full Text
Expired
Date of Patent:
Mar. 04, 2014

Filed:

Jun. 23, 2009
Applicant:

Yan Zhao, San Jose, CA (US);

Inventor:

Yan Zhao, San Jose, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/26 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for characterizing identified defects during charged particle beam inspection of a sample is disclosed. The method comprises obtaining a voltage contrast image of the sample by using a charged particle beam imaging apparatus at an inspection temperature; identifying, from the voltage contrast image, the presence of at least one defect on the sample; providing reference data of the sample, wherein the reference data represents at least one reference defect on the sample; comparing the location or geographical distribution of the identified defects and the reference defects on the sample to correlate the identified defects with the inspection temperature thereby characterizing the identified defects.


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Zhao, Yan. (2014). Method for characterizing identified defects during charged particle beam inspection and application thereof (U.S. Patent No. 8664596). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8664596

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