The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Apr. 25, 2011
Sung-hoon Lee, Hwaseong-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Yun-sung Woo, Suwon-si, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Sung-Hoon Lee, Hwaseong-si, KR;
Sun-ae Seo, Hwaseong-si, KR;
Yun-sung Woo, Suwon-si, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Jin-seong Heo, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Graphene, a method of fabricating the same, and a transistor having the graphene are provided, the graphene includes a structure of carbon (C) atoms partially substituted with boron (B) atoms and nitrogen (N) atoms. The graphene has a band gap. The graphene substituted with boron and nitrogen may be used as a channel of a field effect transistor. The graphene may be formed by performing chemical vapor deposition (CVD) method using borazine or ammonia borane as a boron nitride (B—N) precursor.