The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jul. 14, 2011
Sidharth Bhatia, Menlo Park, CA (US);
Hiroshi Hamana, Hyogo, JP;
Paul Edward Gee, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Sidharth Bhatia, Menlo Park, CA (US);
Hiroshi Hamana, Hyogo, JP;
Paul Edward Gee, San Jose, CA (US);
Shankar Venkataraman, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Aspects of the disclosure pertain to methods of depositing silicon oxide layers on substrates. In embodiments, silicon oxide layers are deposited by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor and a second silicon-containing precursor, having both a Si—C bond and a Si—N bond, into a semiconductor processing chamber to form a conformal liner layer. Upon completion of the liner layer, a gap fill layer is formed by flowing a silicon-containing precursor having a Si—O bond, an oxygen-containing precursor into the semiconductor processing chamber. The presence of the conformal liner layer improves the ability of the gap fill layer to grow more smoothly, fill trenches and produce a reduced quantity and/or size of voids within the silicon oxide filler material.