The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Jul. 02, 2012
Akihiro Ishizuka, Sagamihara, JP;
Kazuya Hanaoka, Fujisawa, JP;
Shinya Sasagawa, Chigasaki, JP;
Sho Nagamatsu, Isehara, JP;
Akihiro Ishizuka, Sagamihara, JP;
Kazuya Hanaoka, Fujisawa, JP;
Shinya Sasagawa, Chigasaki, JP;
Sho Nagamatsu, Isehara, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An object is to provide a semiconductor device having excellent characteristics, in which a channel layer includes an oxide semiconductor with high crystallinity. In addition, a semiconductor device including a base film with improved planarity is provided. CMP treatment is performed on the base film of the transistor and plasma treatment is performed thereon after the CMP treatment, whereby the base film can have a center line average roughness Raof less than 0.1 nm. The oxide semiconductor layer with high crystallinity is formed over the base film having planarity, which is obtained by the combination of the plasma treatment and the CMP treatment, thereby improving the characteristics of the semiconductor device.