The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2014
Filed:
Nov. 17, 2011
Bei LI, Fremont, CA (US);
Sean Barstow, San Jose, CA (US);
Anh Duong, Fremont, CA (US);
Zhendong Hong, San Jose, CA (US);
Ashley Lacey, Dublin, CA (US);
Bei Li, Fremont, CA (US);
Sean Barstow, San Jose, CA (US);
Anh Duong, Fremont, CA (US);
Zhendong Hong, San Jose, CA (US);
Ashley Lacey, Dublin, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices.