The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Feb. 13, 2010
Applicants:

Chongying Xu, New Milford, CT (US);

Weimin LI, New Milford, CT (US);

Thomas M. Cameron, Newtown, CT (US);

Inventors:

Chongying Xu, New Milford, CT (US);

Weimin Li, New Milford, CT (US);

Thomas M. Cameron, Newtown, CT (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.


Find Patent Forward Citations

Loading…