The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 04, 2014

Filed:

Sep. 28, 2010
Applicants:

Shiro Tsukamoto, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Inventors:

Shiro Tsukamoto, Ibaraki, JP;

Tomio Otsuki, Ibaraki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C25B 9/00 (2006.01); C23C 14/00 (2006.01); C25B 11/00 (2006.01); C25B 13/00 (2006.01); C04B 35/00 (2006.01); H01B 1/02 (2006.01); C01B 33/20 (2006.01); C01G 25/02 (2006.01); C01G 27/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The object of this invention is to provide a high quality titanium target for sputtering capable of reducing the impurities that cause generation of particles and abnormal discharge, which is free from fractures and cracks during high power sputtering (high rate sputtering), and capable of stabilizing the sputtering properties and effectively suppressing the generation of particles upon deposition. This invention is able to solve foregoing problems using a high purity titanium target for sputtering containing, as additive components, 3 to 10 mass ppm of S and 0.5 to 3 mass ppm of Si, and in which the purity of the target excluding additive components and gas components is 99.995 mass percent or higher.


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