The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 25, 2014

Filed:

Feb. 04, 2013
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventor:

Jie Zhao, Singapore, SG;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention provides an OPC method. First, a mask pattern is provided. A first region and a second region are detected in the mask pattern. The mask pattern comprises at least a first pattern in the first region and a second pattern in the second pattern, and the first pattern with a first width, a first gap with a first space, the second pattern with a second width and a second gap with a second space are disposed in sequence, wherein the second space value is substantially 2.5 to 3.5 times the value of the first width. Then, a modification process is performed by changing the arrangement of the mask pattern thereby making the mask pattern become a revised pattern, so the first pattern is not influenced by light passing through the second gap during an exposure process. Finally, the revised pattern is outputted onto a mask.


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