The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Jul. 08, 2008
Ming-chang Kuo, Hsinchu, TW;
Chao-i Wu, Hsinchu, TW;
Ming-Chang Kuo, Hsinchu, TW;
Chao-I Wu, Hsinchu, TW;
MACRONIX International Co., Ltd., Hsinchu, TW;
Abstract
A method of operating a non-volatile memory having a substrate, a gate, a charge-trapping layer, a source region and a drain region is provided. The charge-trapping layer close to the source region is an auxiliary charge region and the charge-trapping layer close to the drain region is a data storage region. Before prosecuting the operation, electrons have been injected into the auxiliary charge region. When prosecuting the programming operation, a first voltage is applied to the gate, a second voltage is applied to the source region, a third voltage is applied to the drain region and a fourth voltage is applied to the substrate. The first voltage is greater than the fourth voltage, the third voltage is greater than the second voltage, and the second voltage is greater than the fourth voltage to initiate a channel initiated secondary hot electron injection to inject electrons into the data storage region.