The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Oct. 04, 2012
Etron Technology, Inc., Hsinchu, TW;
Ming-Hong Kuo, Hsinchu, TW;
Etron Technology, Inc., Hsinchu, TW;
Abstract
A DRAM memory structure at least includes a strip semiconductive material disposed on a substrate and extending along a first direction, a split gate disposed on the substrate and extending along a second direction, a dielectric layer at least sandwiched between the split gate and the substrate, a gate dielectric layer at least sandwiched between the split gate and the strip semiconductive material, and a capacitor unit. The split gate independently includes a first block and a second block to divide the strip semiconductive material into a source terminal, a drain terminal and a channel. The capacitor unit is electrically connected to the source terminal.