The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Mar. 07, 2013
Nanya Technology Corporation, Tao-Yuan Hsien, TW;
Ying Cheng Chuang, Taoyuan County, TW;
Ping Cheng Hsu, Taipei, TW;
Sheng Wei Yang, Taoyuan County, TW;
Ming Cheng Chang, Taipei County, TW;
Hung Ming Tsai, Kaohsiung, TW;
Nanya Technology Corporation, Tao-Yuan Hsien, TW;
Abstract
A method of fabricating a memory device includes forming a plurality of first insulative blocks and a plurality of second insulative blocks arranged in an alternating manner in a substrate, forming a plurality of wide trenches in the substrate to form a plurality of protruding blocks, forming a word line on each sidewall of the protruding blocks, isolating the word line on each sidewall of the protruding block, and forming an trench filler in the protruding block to form two mesa structures, wherein the first insulative block and the second insulative block have different depths, and the wide trenches are transverse to the first insulative blocks.