The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Sep. 04, 2012
Te-hsun Hsu, Hsinchu County, TW;
Hsin-ming Chen, Hsinchu, TW;
Wen-hao Ching, Hsinchu County, TW;
Wei-ren Chen, Pingtung County, TW;
Te-Hsun Hsu, Hsinchu County, TW;
Hsin-Ming Chen, Hsinchu, TW;
Wen-Hao Ching, Hsinchu County, TW;
Wei-Ren Chen, Pingtung County, TW;
Ememory Technology Inc., Hsin-Chu, TW;
Abstract
The present invention provides a method of fabricating an erasable programmable single-poly nonvolatile memory, comprising the steps of: defining a first area and a second area in a first type substrate; forming a second type well region in the first area; forming a first gate oxide layer and a second gate oxide layer covering a surface of the first area, wherein the second gate oxide layer extends to and is adjacent to the second area; forming a DDD region in the second area; etching a portion of the second gate oxide layer above the second area; forming two polysilicon gates covering the first and the second gate oxide layers; and defining a second type doped region in the DDD region and defining first type doped regions in the second type well region.