The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2014
Filed:
Mar. 14, 2013
International Business Machines Corporation, Armonk, NY (US);
Christos D. Dimitrakopoulos, Baldwin Place, NY (US);
Guy Cohen, Mohegan Lake, NY (US);
Stephen M. Gates, Ossining, NY (US);
Alfred Grill, White Plains, NY (US);
Timothy J. McArdle, Mahopac, NY (US);
Chun-yung Sung, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A graphene layer is provided onto at least an upper surface of a first dielectric material which includes at least one first conductive region contained therein. At least one semiconductor device is formed using the graphene layer as an element of the at least one semiconductor device. After forming the at least one semiconductor device, a second dielectric material is formed covering the graphene layer, the at least one semiconductor device, and portions of the first dielectric material. The second dielectric that is formed includes at least one second conductive region contained therein, and the at least one second conductive region is in contact with a conductive element of the at least one semiconductor device.