The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Jun. 12, 2007
Applicants:

Badih El-kareh, Cedar Park, TX (US);

Leonard Forbes, Corvallis, OR (US);

Inventors:

Badih El-Kareh, Cedar Park, TX (US);

Leonard Forbes, Corvallis, OR (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Memory devices and methods of programming and forming the same are disclosed. In one embodiment, a memory device has memory cells contained within dielectric isolation structures to isolate them from at least those memory cells in communication with other bit lines, such as to facilitate forward-bias write operations. The dielectric isolation structures contain an upper well having a first conductivity type and a buried well having a second conductivity type. By forward biasing the junction from the buried well to the upper well, electrons can be injected into charge-storage nodes of memory cells that are contained within the dielectric isolation structures.


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