The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Mar. 08, 2013
Applicants:

Stmicroelectronics, Inc., Coppell, TX (US);

Stmicroelectronics SA, Montrouge, FR;

Medtronic, Inc., Minneapolis, MN (US);

Inventors:

Kevin K. Walsh, Peoria, AZ (US);

Paul F. Gerrish, Phoenix, AZ (US);

Larry E. Tyler, Mesa, AZ (US);

Mark A. Lysinger, Carrollton, TX (US);

David C. McClure, Carrollton, TX (US);

François Jacquet, Montbonnot St. Martin, FR;

Assignees:

STMicroelectronics, Inc., Coppell, TX (US);

STMicroelectronics S/A, Montrouge, FR;

Medtronics, Inc., Minneapolis, MN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An SRAM having two capacitors connected in series between respective bit storage nodes of each memory cell. The two inverters of the memory cell are powered by a positive voltage and a low voltage. The two capacitors are connected to each other at a common node. A leakage current generator is coupled to the common node. The leakage current generator supplies to the common node a leakage current to maintain a voltage which is approximately halfway between the voltages of the high and low SRAM supplies.


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