The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Nov. 08, 2011
Ming-da Cheng, Tonfene, TW;
Chin-tsan Yeh, Hsinchu, TW;
Tuung Luoh, Taipei, TW;
Chin-ta Su, Yunlin County, TW;
Ta-hung Yang, Toufen Township, Miaoli County, TW;
Kuang-chao Chen, Jhudong Township, Hsinchu County, TW;
Ming-Da Cheng, Tonfene, TW;
Chin-Tsan Yeh, Hsinchu, TW;
Tuung Luoh, Taipei, TW;
Chin-Ta Su, Yunlin County, TW;
Ta-Hung Yang, Toufen Township, Miaoli County, TW;
Kuang-Chao Chen, Jhudong Township, Hsinchu County, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming an isolation structure, comprising: (a) providing a base having a recess; (b) forming a stop layer on the base and in the recess; (c) forming a dielectric material on the stop layer so as to allow the rest of the recess to be filled with the dielectric material; (d) removing the dielectric material over the base by performing a chemical mechanical polishing (CMP) process until a part of the stop layer is exposed so as to form a dielectric layer in the recess; and (e) removing a part of the stop layer, wherein the another part of the stop layer and the dielectric layer filled in the recess constitute the isolation structure.