The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Feb. 04, 2011
Shunpei Yamazaki, Tokyo, JP;
Teruyuki Fujii, Kanagawa, JP;
Ryota Imahayashi, Fukuoka, JP;
Shinya Sasagawa, Kanagawa, JP;
Motomu Kurata, Kanagawa, JP;
Fumika Taguchi, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Teruyuki Fujii, Kanagawa, JP;
Ryota Imahayashi, Fukuoka, JP;
Shinya Sasagawa, Kanagawa, JP;
Motomu Kurata, Kanagawa, JP;
Fumika Taguchi, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
An object is to provide a semiconductor device having a novel structure in which a transistor including an oxide semiconductor and a transistor including a semiconductor material other than an oxide semiconductor are stacked. The semiconductor device includes a first transistor, an insulating layer over the first transistor, and a second transistor over the insulating layer. In the semiconductor device, the first transistor includes a first channel formation region, the second transistor includes a second channel formation region, the first channel formation region includes a semiconductor material different from a semiconductor material of the second channel formation region, and the insulating layer includes a surface whose root-mean-square surface roughness is less than or equal to 1 nm.