The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
Oct. 09, 2009
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Linwei Yu, Palaiseau, FR;
Pere Roca I Cabarrocas, Villebon sur Yvette, FR;
Linwei Yu, Palaiseau, FR;
Ecole Polytechnique, Palaiseau, FR;
Centre National de la Recherche Scientifique, Paris, FR;
Abstract
Fabricating semiconductor nanowires () on a substrate () having a metallic oxide layer (), includes: a) exposing the metallic oxide layer to a hydrogen plasma () of power P for a duration t suitable for reducing the layer and for forming metallic nanodrops () of radius (R) on the surface of the metallic oxide layer; b) low temperature plasma-assisted deposition of a thin layer () of a semiconductor material on the metallic oxide layer including the metallic nanodrops, the thin layer having a thickness (H) suitable for covering the metallic nanodrops; and c) thermal annealing at a temperature T sufficient to activate lateral growth of nanowires by catalysis of the material deposited as a thin layer from the metallic nanodrops. Nanowires are obtained by this method and nanometric transistors including a semiconductor nanowire.