The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 18, 2014
Filed:
May. 10, 2012
Kyung-woo Lee, Hwaseong-si, KR;
Jin-sung Kim, Suwon-si, KR;
Joo-byoung Yoon, Yongin-si, KR;
Yeong-cheol Lee, Seoul, KR;
Sang-jun Park, Hwaseong-si, KR;
Hee-kyeong Jeon, Suwon-si, KR;
Kyung-Woo Lee, Hwaseong-si, KR;
Jin-Sung Kim, Suwon-si, KR;
Joo-Byoung Yoon, Yongin-si, KR;
Yeong-Cheol Lee, Seoul, KR;
Sang-Jun Park, Hwaseong-si, KR;
Hee-Kyeong Jeon, Suwon-si, KR;
Samsung Electronics Co., Ltd, Suwon-si, KR;
Abstract
A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.