The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 11, 2014
Filed:
Sep. 14, 2012
Takashi Ando, Tuckahoe, NY (US);
Aritra Dasgupta, Wappingers Falls, NY (US);
Unoh Kwon, Fishkill, NY (US);
Sean M. Polvino, Brooklyn, NY (US);
Takashi Ando, Tuckahoe, NY (US);
Aritra Dasgupta, Wappingers Falls, NY (US);
Unoh Kwon, Fishkill, NY (US);
Sean M. Polvino, Brooklyn, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments relate to a field-effect transistor (FET) replacement gate apparatus. The apparatus includes one or more of a substrate and insulator including a base and side walls defining a trench. A high-dielectric constant (high-k) layer is formed on the base and side walls of the trench. The high-k layer has an upper surface conforming to a shape of the trench. A first layer is formed on the high-k layer and conforms to the shape of the trench. The first layer includes an aluminum-free metal nitride. A second layer is formed on the first layer and conforms to the shape of the trench. The second layer includes aluminum and at least one other metal. A third layer is formed on the second layer and conforms to the shape of the trench. The third layer includes aluminum-free metal nitride.