The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 11, 2014

Filed:

Jun. 10, 2009
Applicants:

Hans-joachim Schulze, Taufkirchen, DE;

Helmut Strack, Munich, DE;

Hans-joerg Timme, Ottobrunn, DE;

Rainer Winkler, Zorneding, DE;

Inventors:

Hans-Joachim Schulze, Taufkirchen, DE;

Helmut Strack, Munich, DE;

Hans-Joerg Timme, Ottobrunn, DE;

Rainer Winkler, Zorneding, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.


Find Patent Forward Citations

Schulze, Hans-Joachim. (2014). Method for producing a semiconductor layer (U.S. Patent No. 8647968). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8647968

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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