The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Feb. 28, 2011
Applicants:

Jen-hao Liu, Zhunan Township, TW;

Chyi-tsong NI, Hsinchu, TW;

Hsiao-yin Lin, Hsinchu, TW;

Chung-min Lin, Taipei, TW;

Inventors:

Jen-Hao Liu, Zhunan Township, TW;

Chyi-Tsong Ni, Hsinchu, TW;

Hsiao-Yin Lin, Hsinchu, TW;

Chung-Min Lin, Taipei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01);
U.S. Cl.
CPC ...
Abstract

An embodiment of the disclosure provides a semiconductor device. The semiconductor device includes a plurality of metallization layers comprising a topmost metallization layer. The topmost metallization layer has two metal features having a thickness Tand being separated by a gap. A composite passivation layer comprises a HDP CVD oxide layer under a nitride layer. The composite passivation layer is disposed over the metal features and partially fills the gap. The composite passivation layer has a thickness Tabout 20% to 50% of the thickness T


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