The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jan. 14, 2011
Sagy Levy, Zichron-Yoakev, IL;
Krishnaswamy Ramkumar, San Jose, CA (US);
Fredrick Jenne, Los Gatos, CA (US);
Sam Geha, Cupertino, CA (US);
Sagy Levy, Zichron-Yoakev, IL;
Krishnaswamy Ramkumar, San Jose, CA (US);
Fredrick Jenne, Los Gatos, CA (US);
Sam Geha, Cupertino, CA (US);
Cypress Semiconductor Corporation, San Jose, CA (US);
Abstract
A semiconductor device including a silicon-oxide-oxynitride-oxide-silicon structure and methods of forming the same are provided. Generally, the structure comprises: a tunnel oxide layer on a surface of a substrate including silicon; a multi-layer charge storing layer including an oxygen-rich, first oxynitride layer on the tunnel oxide layer in which the stoichiometric composition of the first oxynitride layer results in it being substantially trap free, and an oxygen-lean, second oxynitride layer on the first oxynitride layer in which the stoichiometric composition of the second oxynitride layer results in it being trap dense; a blocking oxide layer on the second oxynitride layer; and a silicon containing gate layer on the blocking oxide layer. Other embodiments are also disclosed.