The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Aug. 14, 2012
Wei-shan Liao, Erlun Township, Yunlin County, TW;
An-hung Lin, New Taipei, TW;
Hong-ze Lin, Hsinchu, TW;
Bo-jui Huang, Hsinchu, TW;
Wei-Shan Liao, Erlun Township, Yunlin County, TW;
An-Hung Lin, New Taipei, TW;
Hong-Ze Lin, Hsinchu, TW;
Bo-Jui Huang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A lateral diffusion metal-oxide-semiconductor (LDMOS) transistor structure comprises a barrier layer, a semiconductor layer, a source, a first drain and a guard ring. The barrier layer with a first polarity is disposed in a substrate. The semiconductor layer with a second polarity is disposed on the barrier layer. The source has a first polarity region and a second polarity region both formed in the semiconductor layer. The first drain is disposed in the semiconductor layer and has a drift region with the second polarity. The guard ring with the first polarity extends downward from a surface of the semiconductor layer in a manner of getting in touch with the barrier layer and to surround the source and the drain, and is electrically connected to the source.