The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Apr. 20, 2011
Ching-hung Kao, Hsinchu County, TW;
Sheng-hsiong Yang, Hsinchu, TW;
Ching-Hung Kao, Hsinchu County, TW;
Sheng-Hsiong Yang, Hsinchu, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A high voltage metal oxide semiconductor device with low on-state resistance is provided. A multi-segment isolation structure is arranged under a gate structure and beside a drift region for blocking the current from directly entering the drift region. Due to the multi-segment isolation structure, the path length from the body region to the drift region is increased. Consequently, as the breakdown voltage applied to the gate structure is increased, the on-state resistance is reduced.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile