The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Apr. 10, 2012
Shih-hung Chen, Jhudong Township, HsinChu County, TW;
Hang-ting Lue, Hsinchu, TW;
Kuang-yeu Hsieh, Hsinchu, TW;
Shih-Hung Chen, Jhudong Township, HsinChu County, TW;
Hang-Ting Lue, Hsinchu, TW;
Kuang-Yeu Hsieh, Hsinchu, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A semiconductor structure and a manufacturing method of the same are provided. The semiconductor structure includes a base, a stacked structure and a doped layer. The stacked structure is formed on the base, wherein the stacked structure comprises a plurality of conductive strips and a plurality of insulating strips, one of the conductive strips is located between adjacent two insulating strips, the stacked structure has a first side wall, and a long edge of the first side wall is extended along a channel direction. The doped layer is formed in the first side wall, wherein the doped layer is formed by an ion implantation applied to the first side wall, and an acute angle is contained between an implantation direction of the ion implantation and the first side wall.