The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Jul. 12, 2011
Chun-wei Hsu, Taipei, TW;
Po-cheng Huang, Chiayi, TW;
Teng-chun Tsai, Tainan, TW;
Chia-lin Hsu, Tainan, TW;
Chih-hsun Lin, Ping-Tung County, TW;
Yen-ming Chen, New Taipei, TW;
Chia-hsi Chen, Kao-Hsiung, TW;
Chang-hung Kung, Kaohsiung, TW;
Chun-Wei Hsu, Taipei, TW;
Po-Cheng Huang, Chiayi, TW;
Teng-Chun Tsai, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Chih-Hsun Lin, Ping-Tung County, TW;
Yen-Ming Chen, New Taipei, TW;
Chia-Hsi Chen, Kao-Hsiung, TW;
Chang-Hung Kung, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.