The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Aug. 31, 2011
Koichi Tachibana, Kanagawa-ken, JP;
Shigeya Kimura, Tokyo, JP;
Toshiki Hikosaka, Tokyo, JP;
Taisuke Sato, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Koichi Tachibana, Kanagawa-ken, JP;
Shigeya Kimura, Tokyo, JP;
Toshiki Hikosaka, Tokyo, JP;
Taisuke Sato, Kanagawa-ken, JP;
Toshiyuki Oka, Kanagawa-ken, JP;
Shinya Nunoue, Chiba-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor light emitting device includes: a stacked structure body, first and second electrodes, and a pad layer. The body includes first semiconductor layer of a first conductivity type, a light emitting layer, and a second semiconductor layer of second conductivity type. The first semiconductor layer has first and second portions. The light emitting layer is provided on the second portion. The second semiconductor layer is provided on the light emitting layer. The first electrode is provided on the first portion. The second electrode is provided on the second semiconductor layer and is transmittable to light emitted from the light emitting layer. The pad layer is connected to the second electrode. A transmittance of the pad layer is lower than that of the second electrode. A sheet resistance of the second electrode increases continuously along a direction from the pad layer toward the first electrode.