The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Feb. 13, 2012
Shunpei Yamazaki, Tokyo, JP;
Satoshi Murakami, Tochigi, JP;
Masahiko Hayakawa, Kanagawa, JP;
Kiyoshi Kato, Kanagawa, JP;
Mitsuaki Osame, Kanagawa, JP;
Takashi Hirosure, Tochigi, JP;
Saishi Fujikawa, Kanagawa, JP;
Shunpei Yamazaki, Tokyo, JP;
Satoshi Murakami, Tochigi, JP;
Masahiko Hayakawa, Kanagawa, JP;
Kiyoshi Kato, Kanagawa, JP;
Mitsuaki Osame, Kanagawa, JP;
Takashi Hirosure, Tochigi, JP;
Saishi Fujikawa, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A semiconductor display device is formed including an interlayer insulating. Specifically, a TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.