The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Aug. 22, 2011
Yoshinobu Ooya, Nirasaki, JP;
Akira Tanabe, Nirasaki, JP;
Yoshinori Yasuta, Nirasaki, JP;
Tokyo Electron Limited, Tokyo, JP;
Abstract
There is provided a plasma processing apparatus capable of optimizing a plasma process in response to various requirements of a micro processing by effectively controlling a RF bias function. In this plasma processing apparatus, a high frequency power RFsuitable for generating plasma of a capacitively coupling type is applied to an upper electrode(or lower electrode) from a third high frequency power supply, and two high frequency powers RF(0.8 MHz) and RF(13 MHz) suitable for attracting ions are applied to the susceptorfrom first and second high frequency power suppliesand, respectively, in order to control energy of ions incident onto a semiconductor wafer W from the plasma. A control unitcontrols a total power and a power ratio of the first and second high frequency powers RFand RFdepending on specifications, conditions or recipes of an etching process.