The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Dec. 21, 2010
Xiang HU, Beacon, NY (US);
Helen Wang, LaGrangeville, NY (US);
Arifuzzaman (Arif) Sheikh, Poughkeepsie, NY (US);
Habib Hichri, Poughkeepsie, NY (US);
Richard Wise, Newburgh, NY (US);
Xiang Hu, Beacon, NY (US);
Helen Wang, LaGrangeville, NY (US);
Arifuzzaman (Arif) Sheikh, Poughkeepsie, NY (US);
Habib Hichri, Poughkeepsie, NY (US);
Richard Wise, Newburgh, NY (US);
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of manufacturing an integrated circuit system includes: providing a substrate; forming a polysilicon layer over the substrate; forming an anti-reflective coating layer over the polysilicon layer; etching an anti-reflective coating pattern into the anti-reflective coating layer leaving an anti-reflective coating residue over the polysilicon layer; and etching the anti-reflective coating residue with an etchant gas mixture comprising hydrogen bromide, chlorine, and oxygen to remove the anti-reflective coating residue for mitigating the formation of a polysilicon protrusion.