The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 04, 2014

Filed:

Mar. 07, 2012
Applicants:

Byung-hong Chung, Seoul, KR;

Young-hee Kim, Austin, TX (US);

In-sun Yi, Suwon-si, KR;

Han-mei Choi, Seoul, KR;

Inventors:

Byung-Hong Chung, Seoul, KR;

Young-Hee Kim, Austin, TX (US);

In-Sun Yi, Suwon-si, KR;

Han-Mei Choi, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a nonvolatile memory device includes providing an intermediate structure in which a floating gate and an isolation film are disposed adjacent to each other on a semiconductor substrate and a gate insulating film is disposed on the floating gate and the isolation film, forming a conductive film on the gate insulating film, and annealing the conductive film so that part of the conductive film on an upper portion of the floating gate flows down onto a lower portion of the floating gate and an upper portion of the isolation film.


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