The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
Apr. 18, 2012
Gerald K. Bartley, Rochester, MN (US);
Philip R. Germann, Oronoco, MN (US);
John E. Sheets, Ii, Zumbrota, MN (US);
Gerald K. Bartley, Rochester, MN (US);
Philip R. Germann, Oronoco, MN (US);
John E. Sheets, II, Zumbrota, MN (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method and structures are provided for implementing semiconductor signal-capable capacitors with deep trench and Through-Silicon-Via (TSV) technologies. A deep trench N-well structure is formed and an implant is provided in the deep trench N-well structure with a TSV formed in a semiconductor chip. At least one angled implant is created around the TSV in a semiconductor chip. The TSV is surrounded with a dielectric layer and filled with a conducting material which forms one electrode of the capacitor. A connection is made to one implant forming a second electrode to the capacitor.