The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2014
Filed:
May. 18, 2012
Paul D. Brabant, Scodack, NY (US);
Keith Chung, Guilderland, NY (US);
Hong He, Schenectady, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Manabu Shinriki, Albany, NY (US);
Paul D. Brabant, Scodack, NY (US);
Keith Chung, Guilderland, NY (US);
Hong He, Schenectady, NY (US);
Devendra K. Sadana, Pleasantville, NY (US);
Manabu Shinriki, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Matheson Tri-Gas, Inc., Basking Ridge, NJ (US);
Abstract
Cyclic deposit and etch (CDE) selective epitaxial growth employs an etch chemistry employing a combination of hydrogen chloride and a germanium-containing gas to provide selective deposition of a silicon germanium alloy at temperatures lower than 625° C. High strain epitaxial silicon germanium alloys having a germanium concentration greater than 35 atomic percent in a temperature range between 400° C. and 550° C. A high order silane having a formula of SinH2n+2, in which n is an integer greater than 3, in combination with a germanium-containing precursor gas is employed to deposit the silicon germanium alloy with thickness uniformity and at a high deposition rate during each deposition step in this temperature range. Presence of the germanium-containing gas in the etch chemistry enhances the etch rate of the deposited silicon germanium alloy material during the etch step.