The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 28, 2014

Filed:

Sep. 25, 2009
Applicants:

Kai-ling Chiu, Pingtung County, TW;

Victor-chiang Liang, Hsin-Chu, TW;

Chih-yu Tseng, Hsinchu, TW;

Kun-szu Tseng, Pingtung County, TW;

Cheng-wen Fan, Hsinchu County, TW;

Hsin-kai Chiang, Hsinchu, TW;

Chih-chen Hsueh, Kaohsiung, TW;

Inventors:

Kai-Ling Chiu, Pingtung County, TW;

Victor-Chiang Liang, Hsin-Chu, TW;

Chih-Yu Tseng, Hsinchu, TW;

Kun-Szu Tseng, Pingtung County, TW;

Cheng-Wen Fan, Hsinchu County, TW;

Hsin-Kai Chiang, Hsinchu, TW;

Chih-Chen Hsueh, Kaohsiung, TW;

Assignee:

United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
Abstract

A resistor is disclosed. The resistor is disposed on a substrate, in which the resistor includes: a dielectric layer disposed on the substrate; a polysilicon structure disposed on the dielectric layer; two primary resistance structures disposed on the dielectric layer and at two ends of the polysilicon structure; and a plurality of secondary resistance structures disposed on the dielectric layer and interlaced with the polysilicon structures.


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