The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Jul. 19, 2012
Ralf Siemieniec, Villach, AT;
Dethard Peters, Hoechstadt, DE;
Peter Friedrichs, Nuremberg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A manufacturing method provides a semiconductor device having a semiconductor body defining a source region, a body region, a drift region and a diode region. The drift region has a first drift region section and a second drift region section. The diode region is buried within the drift region, and has a semiconductor type opposite to the drift region to form a diode. The diode region is separated from the gate electrode by the first drift region section extending from the diode region in a vertical direction. The gate electrode is adjacent the body region and insulated from the body region by a gate dielectric. A source electrode is electrically connected to the source region, the body region and the diode region. A semiconductor region of a doping type opposite to the doping type of the drift region is arranged between the first drift region section and the source electrode.