The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Dec. 02, 2011
Applicants:
Ki-hong Lee, Gyeonggi-do, KR;
Kwon Hong, Gyeonggi-do, KR;
Beom-yong Kim, Gyeonggi-do, KR;
Inventors:
Assignee:
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract
A nonvolatile memory device includes a channel protruding in a vertical direction from a substrate, a plurality of interlayer dielectric layers and gate electrode layers which are alternately stacked over the substrate along the channel, and a memory layer formed between the channel and a stacked structure of the interlayer dielectric layers and gate electrode layers. Two or more gate electrode layers of the plurality of gate electrode layers are coupled to an interconnection line to form a selection transistor.