The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Apr. 29, 2011
Bipin Rajendran, White Plains, NY (US);
Thomas Happ, Tarrytown, NY (US);
Hsiang-lan Lung, Hsinchu, TW;
Min Yang, Yorktown Heights, NY (US);
Bipin Rajendran, White Plains, NY (US);
Thomas Happ, Tarrytown, NY (US);
Hsiang-Lan Lung, Hsinchu, TW;
Min Yang, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Macronix International Co., Ltd., Hsinchu, TW;
Qimonda AG, Munich, DE;
Abstract
The present invention, in one embodiment, provides a method of producing a PN junction the method including at least the steps of providing a Si-containing substrate; forming an insulating layer on the Si-containing substrate; forming a via through the insulating layer to expose at least a portion of the Si-containing substrate; forming a seed layer of the exposed portion of the Si containing substrate; forming amorphous Si on at least the seed layer; converting at least a portion of the amorphous Si to provide crystalline Si; and forming a first dopant region abutting a second dopant region in the crystalline Si.