The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Dec. 23, 2008
Jianming Fu, Palo Alto, CA (US);
Zheng Xu, Pleasanton, CA (US);
Peijun Ding, Saratoga, CA (US);
Chentao Yu, Sunnyvale, CA (US);
Guanghua Song, Fremont, CA (US);
Jianjun Liang, Fremont, CA (US);
Jianming Fu, Palo Alto, CA (US);
Zheng Xu, Pleasanton, CA (US);
Peijun Ding, Saratoga, CA (US);
Chentao Yu, Sunnyvale, CA (US);
Guanghua Song, Fremont, CA (US);
Jianjun Liang, Fremont, CA (US);
Silevo, Inc., Fremont, CA (US);
Abstract
One embodiment of the present invention provides a method for fabricating a solar cell. The method includes: melting a metallurgical-grade (MG) Si feedstock, lowering a single-crystalline Si seed to touch the surface of the molten MG-Si, slowly pulling out a single-crystal Si ingot of the molten MG-Si, processing the Si ingot into single crystal Si wafers to form MG-Si substrates for subsequent epitaxial growth, leaching out residual metal impurities in the MG-Si substrate, epitaxially growing a layer of single-crystal Si thin film doped with boron on the MG-Si substrate, doping phosphor to the single-crystal Si thin film to form an emitter layer, depositing an anti-reflection layer on top of the single-crystal Si thin film, and forming the front and the back electrical contacts.