The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 28, 2014
Filed:
Sep. 23, 2011
Jae-ho Min, Gyeonggi-do, KR;
O-ik Kwon, Gyeonggi-Do, KR;
Bum-soo Kim, Gyeonggi-do, KR;
Dong-chan Kim, Seoul, KR;
Myeong-cheol Kim, Gyeonggi-Do, KR;
Jae-Ho Min, Gyeonggi-do, KR;
O-Ik Kwon, Gyeonggi-Do, KR;
Bum-Soo Kim, Gyeonggi-do, KR;
Dong-chan Kim, Seoul, KR;
Myeong-cheol Kim, Gyeonggi-Do, KR;
Abstract
Methods of forming a semiconductor device may include providing a feature layer having a first region and a second region. The methods may also include forming a dual mask layer on the feature layer. The methods may further include forming a variable mask layer on the dual mask layer. The methods may additionally include forming a first structure on the feature layer in the first region and a second structure on the feature layer in the second region by patterning the variable mask layer and the dual mask layer. The methods may also include forming a first spacer on a sidewall of the first structure and a second spacer on a sidewall of the second structure. The methods may further include removing the first structure while maintaining at least a portion of the second structure.